Correlation between photoreflectance signal intensity and current gain of InP/InGaAs heterojunction bipolar transistor structures

Journal of Applied Physics

Volumn 88, Issue 3, 2000, Pages 1600-1605

  Sugiyama, Hiroki ^a   Watanabe, Noriyuki ^a   Watanabe, Kazuo ^a   Kobayashi, Takashi ^a   Wada, Kazumi ^b  

^a NTT CORPORATION   (Japan)

^b Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041687512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373860     Document Type: Article

References (16)

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