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Journal of Electron Spectroscopy and Related Phenomena

Volumn 88-91, Issue , 1998, Pages 609-612

InP(100)-(2 × 4) surface electronic structure studied by angle-resolved photoelectron spectroscopy

(10) Huff, W R A a,c Shimomura, M a,b Sanada, N b Kaneda, G b Takeuchi, T b Suzuki, Y b Yeom, H W c Abukawa, T a Kono, S a Fukuda, Y b

a TOHOKU UNIVERSITY (Japan)

b SHIZUOKA UNIVERSITY (Japan)

c UNIVERSITY OF TOKYO (Japan)

Author keywords

Electronic structure; III V semiconductor; Indium phosphide; InP(100); Photoelectron spectroscopy; Valence band

Indexed keywords

EID: 0041637350 PISSN: 03682048 EISSN: None Source Type: Journal
DOI: 10.1016/s0368-2048(97)00266-1 Document Type: Article

Times cited : (1)

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