Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

Materials Science and Engineering: A

Volumn 238, Issue 1, 1997, Pages 148-151

  Chaldyshev, V V ^a   Bert, N A ^a   Preobrazhenskii, V V ^b   Putyato, M A ^b   Semyagin, B R ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

As clusters; Low temperature; Ostwald ripening

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; FILM GROWTH; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

OSTWALD RIPENING;

SEMICONDUCTING FILMS;

EID: 0041636201     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5093(97)00442-5     Document Type: Article

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