Spatial ordering of As clusters due to indium delta-doping of LTMBE GaAs

Materials Research Society Symposium - Proceedings

Volumn 417, Issue , 1996, Pages 135-140

  Bert, N A ^a   Chaldyshev, V V ^a   Faleev, N N ^a   Kunitsyn, A E ^a   Tret'yakov, V V ^a   Lubyshev, D I ^a   Preobrazhenskii, V V ^a   Semyagin, B R ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BERYLLIUM; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; PRECIPITATION (CHEMICAL); SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON;

ARSENIC NANO CLUSTER; INDIUM DELTA DOPING; SPATIAL ORDERING; SPATIALLY ORDERED STRUCTURE;

SEMICONDUCTOR DOPING;

EID: 0029702097     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)