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1
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0033881947
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Investigation of the solar cell quality by LBIC-like image techniques
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A method of analyzing the induced current profiles obtained on a Schottky diode at normal irradiation
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Determination of minority-carrier lifetime and surface recombination velocity by optical-beam-induced-current measurements at different light wavelengths
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Flohr, Th.1
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0030383826
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Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration
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Acciarri M., Binetti S., Garavaglia M., Pizzini S., Detection of junction failures and other defects in silicon and III-V devices using the LBIC technique in lateral configuration, Elsevier, Materials Science & Engineering B, vol. 42, nr 1-3, 1996, pp.208-212
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Acciarri, M.1
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Theoretical investigations of combined EBIC, LBIC, CL and PL experiments
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0024091955
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Unified theoretical description of EBIC, LBIC, CL and PL experiments
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Hergert W., Hildebrandt S., Unified theoretical description of EBIC, LBIC, CL and PL experiments, Phys. stat. sol. (a), vol. 109. 1988, pp.625-833
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Atomic structure of grain boundaries, polycrystalline semiconductors
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0041641852
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High resolution microscopy of grain boundaries in semiconductors
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Cunningaham B., Ast D., High resolution microscopy of grain boundaries in semiconductors, Mat. Res. Syc. Symp. Proc., Grain boundaries in semiconductors, Materials Research Society, vol. 5, 1981, pp. 20-26
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Carrier transport at grain boundaries in semiconductors
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Matare H. F., Carrier transport at grain boundaries in semiconductors, J. Appl. Phys., vol. 56, no, 1984, pp. 2605-2631
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