Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1775-1780

  Peng, Y H ^a   Chen, C C ^a   Kuan, C H ^a   Cheng, H H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Blocking layer; Ge quantum dot infrared photodetector; Long wavelength infrared photodetector; Wavelength tunability

Indexed keywords

ELECTRIC CURRENTS; INFRARED RADIATION; PHOTODETECTORS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

BLOCKING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041592438     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00136-9     Document Type: Conference Paper

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