Substrate temperature measurement by absorption-edge spectroscopy during molecular beam epitaxy of narrow-band gap semiconductor films

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 2, 1997, Pages 329-336

  De Lyon, T J ^a   Roth, J A ^a   Chow, D H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL GROWTH; ENERGY GAP; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TEMPERATURE; TEMPERATURE MEASUREMENT;

ABSORPTION EDGE SPECTROSCOPY; EPILAYERS; INDIUM ARSENIDE; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING FILMS;

EID: 0041554108     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589316     Document Type: Article

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