The core structure and energy of the 90° partial dislocation in Si

CMES - Computer Modeling in Engineering and Sciences

Volumn 3, Issue 2, 2002, Pages 201-211

  Lin, Karin ^a,b   Chrzan, D C ^b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Lawrence Berkeley National Laboratory   (United States)

Author keywords

Dislocation cores; Dislocations in Si

Indexed keywords

EID: 0041461925     PISSN: 15261492     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)

1. Arias, T. A.; Joannopoulos, J. D. (1994): Ab initio theory of dislocation interactions: from close-range spontaneous annihilation to the long-range continuum limit. Physical Review Letters, vol. 73, pp. 680-683.
2. Bennetto, J.; Nunes, R. W.; Vanderbilt, D. (1997): Period-doubled structure for the 90 degrees partial dislocation in silicon. Physical Review Letters, vol. 79, pp. 245-248.
3. Bigger, J. R. K.; McInnes, D. A.; Sutton, A. P.; Payne, M. C.; Stich, I.; King-Smith, R. D.; Bird, D. M.; Clarke, L. J. (1992): Atomic and electronic structures of the 90 degrees partial dislocation in silicon. Physical Review Letters, vol. 69, pp. 2224.
4. Blase, X.; Lin, K.; Canning, A.; Louie, S. G.; Chrzan, D. C. (2000): Structure and energy of the 90 degrees partial dislocation in diamond: a combined ab initio and elasticity theory analysis. Physical Review Letters, vol. 84, pp. 5780-5783.
5. Bulatov, V. V.; Yip, S.; Argon, A. S. (1995): Atomic modes of dislocation mobility in silicon. Philosophical Magazine A, vol. 72, pp. 453-496.
6. Duesbery, M. S.; Joos, B.; Michel, D. J. (1991): Dislocation core studies in empirical silicon models. Physical Review B, vol. 43, pp. 5143-5146.
7. Faradjian, A. K.; Friedman, L. H.; Chrzan, D. C. (1999): Frank-read sources within a continuum simulation. Modelling and Simulation in Materials Science and Engineering, vol. 7, pp. 479-494.
8. Ghoniem, N. M.; Tong, S.-H.; Sun, L. Z. (2000): Parametric dislocation dynamics: A thermodynamics-based approach to investigations of mesoscopic plastic deformation. Physical Review B, vol. 61, pp. 913-927.
9. Gulluoglu, A. N.; Srolovitz, D. J.; LeSar, R.; Lomdahl, P. S. (1989): Dislocation distributions in two dimensions. Scripta Metallurgica, vol. 23, pp. 1347-1352.
10. Hirsch, P. B. (1979): Recent results on the structure of dislocations in tetrahedrally coordinated semiconductors. Journal de Physique (Paris) Colloque, vol. 40, pp. C6/27-32.
11. Hirth, J. P.; Lothe, J. (1992): Theory of Dislocations. Krieger Publishing Company, Malabar, FL, second edition.
12. Jones, R. (1980): The structure of kinks on the 90 degrees partial in silicon and a 'strained-bond model' for dislocation motion. Philosophical Magazine B, vol. 42, pp. 213-219.
13. Kubin, L. P.; Moulin, A.; Pirouz, P. (1999): Dislocations and plasticity in silicon crystals by 3-d mesoscopic simulations. Proceedings of the Materials Research Society, vol. 538, pp. 3-14.
14. Lehto, N.; Öberg, S. (1998): Effects of dislocation interactions: application to the period-doubled core of the 90 degrees partial in silicon. Physical Review Letters, vol. 80, pp. 5568-5571.
15. Maeda, K.; Takeuchi, S. (1996): Enhancement of dislocation mobility in semiconductive crystals. Dislocations in Solids, vol. 10, pp. 443-504.
16. Nunes, R. W.; Bennetto, J.; Vanderbilt, D. (1998): Core reconstruction of the 90 degrees partial dislocation in nonpolar semiconductors. Physical Review B, vol. 58, pp. 12563-12566.
17. Rhee, M.; Zbib, H. M.; Hirth, J. P.; Huang, H.; de la Rubia, T. (1998): Models for long-short-range interactions and cross slip in 3d dislocation simulation of bcc single crystals. Modelling and Simulation in Materials Science and Engineering, vol. 6, pp. 467-492.
18. Schwarz, K. W. (1999): Simulation of dislocations on the mesoscopic scale, i. methods and examples. Journal of Applied Physics, vol. 85, pp. 108-119.
19. Tersoff, J. (1988): Empirical interatomic potential for silicon with improved elastic properties. Physical Review B, vol. 38, pp. 9902-9905.
20. Trinczek, U.; Teichler, H. (1993): Line energies of 30 degrees - and 90 degrees -partial dislocations in silicon and germanium. Physica Status Solidi A, vol. 137, pp. 577-589.
21. Valladares, A.; Petford-Long, A. K.; Sutton, A. P. (1999) : The core reconstruction of the 90 degrees partial dislocation in silicon. Philosophical Magazine Letters, vol. 79, pp. 9-17.