Activation properties of schottky CdTe diodes irradiated by 150 MeV protons

IEEE Transactions on Nuclear Science

Volumn 50, Issue 4 II, 2003, Pages 1013-1019

  Murakami, Mio M ^a   Kobayashi, Yoshihito ^a,b   Kokubun, Motohide ^a   Takahashi, Isao ^a   Okada, Yuu ^a   Kawaharada, Madoka ^a   Nakazawa, Kazuhiro ^b   Watanabe, Shin ^a,b   Sato, Goro ^a,b   Kouda, Manabu ^a,b   Mitani, Takefumi ^a,b   Takahashi, Tadayuki ^b   Suzuki, Masaya ^c   Tashiro, Makoto ^c   Kawasoe, Satoshi ^d   Nomachi, Masaharu ^e   Makishima, Kazuo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c SAITAMA UNIVERSITY   (Japan)

^d HIROSHIMA UNIVERSITY   (Japan)

^e OSAKA UNIVERSITY   (Japan)

Author keywords

Activation; CdTe; Proton; Radiation damage

Indexed keywords

COSMIC RAYS; DEGRADATION; LEAKAGE CURRENTS; PARTICLE DETECTORS; PHOTONS; RADIATION DAMAGE; RADIATION HAZARDS; RADIOACTIVATION ANALYSIS; RADIOISOTOPES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING CADMIUM TELLURIDE;

ENERGY RESOLUTION;

PROTON IRRADIATION;

EID: 0041424939     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.815120     Document Type: Conference Paper

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