Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

Physica Status Solidi (B) Basic Research

Volumn 238, Issue 2, 2003, Pages 289-292

  Nakaoka, T ^a   Kakitsuka, T ^b   Saito, T ^a   Kako, S ^a   Ishida, S ^a   Nishioka, M ^a   Yoshikuni, Y ^b   Arakawa, Y ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041411704     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200303040     Document Type: Conference Paper

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