A mapped scharfetter-gummel formulation for the efficient simulation of semiconductor device models

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 16, Issue 10, 1997, Pages 1227-1233

  Pardhanani, Anand L ^a   Carey, Graham F ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Curvilinear grids; finite difference; hydrodynamic; iterative; mosfet

Indexed keywords

EID: 0040692261     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.662686     Document Type: Article

References (15)

1. T. J. Bordeion, X.-L. Wang, C. M. Maziar, and A. F. Tasch, "An evaluation of energy transport models for silicon device simulation," Solid-State Electron., vol. 34, no. 6, pp. 617-628, 1991.
2. _, "Accounting for band-structure effects in the hydrodynamic model: A first-order approach for silicon device simulation," Solid-State Electron., vol. 35, no. 2, pp. 131-139, 1992.
3. M. Fukuma and R. Uebbing, "Two-dimensional mosfet simulation with energy transport phenomena," IEDM Tech. Dig., 1984, pp. 621-624.
4. M. Hestenes, Method of Conjugate Gradients for Solving Linear Systems. Washington, DC: NBS, 1952.
5. M. Lundstrom, Transport Fundamentals for Device Applications. Reading, MA: Addison-Wesley, 1990.
6. P. Markowich, The Stationary Semiconductor Device Equations. Vienna, Austria: Springer-Verlag, 1986.
7. B. Meinerzhagen and W. L. Engl., "The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors," IEEE Trans. Electron Devices, vol. 35, pp. 689-697, May 1988.
8. A. L. Pardhanani and G. F. Carey, "Adaptive grid and iterative techniques for submicron device simulation," in Proc. Third Int. Workshop on Computational Electronics, Portland, OR, May 18-20, 1994, pp. 248-251.
9. Texas Inst. Computational and Appl. Math., Univ. Texas, Austin, TICAM Report 97-07, 1997.
10. M. Rudan and F. Odeh, "Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices," COMPEL-Int. J. Comput. Math. Electr. Electron. Eng., vol. 5, no. 3, pp. 149-183, 1986.
11. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Vienna, Austria: Springer-Verlag, 1984.
12. M. Sharma and G. F. Carey, "Semiconductor device simulation using adaptive refinement and flux unwinding," IEEE Trans. Computer-Aided Design, vol. 8, no. 6, pp. 590-598, 1989.
13. T.-W. Tang, "Extension of the Scharfetter-Gummel algorithm to the energy balance equation," IEEE Trans. Electron Devices, vol. ED-31, pp. 1912-1914, Dec. 1984.
14. T.-W. Tang, R. Sridhar, and J. Nam, "An improved hydrodynamic transport model for silicon," IEEE Trans. Electron Devices, vol. ED-40, pp. 1469-1477, Aug. 1993.
15. H. van der Vorst, "Bi-cgstab: A fast and smoothly converging variant of bi-cg for the solution of nonsymmetric linear systems," SIAM J. Sei. Stat. Comput., vol. 13, no. 2, pp. 631-644, 1992.