The EBIC study of boundary effects in the Si PIN photodiodes for X-ray detector applications

Nukleonika

Volumn 44, Issue 4, 1999, Pages 635-646

  Riesz, F ^a   Toth A L ^a   Ryc L ^b   Slysz W ^c   Wegrzecki M ^c  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b SOLTAN INSTITUTE FOR NUCLEAR STUDIES   (Poland)

^c Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040628279     PISSN: 00295922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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