Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction data

Semiconductor Science and Technology

Volumn 12, Issue 3, 1997, Pages 350-354

  Nikulin, A Yu ^a   Stevenson, A W ^b   Hashizume, H ^c   Cookson, D ^d   Hobler, G ^e   Wilkins, S W ^b  

^a MONASH UNIVERSITY   (Australia)

^b CSIRO   (Australia)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

^e VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040421077     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/3/002     Document Type: Article

References (9)

1. Biersack J B and Haggmark L G 1980 Nucl. Instrum. Methods 174 257
2. Nikulin A Yu, Sakata O, Hashizume H and Petrashen P V 1994 J. Appl. Crystallogr. 27 338
3. Nikulin A Yu, Gureyev T E, Stevenson A W, Wilkins S W, Hashizume H and Cookson D 1995 J. Appl. Crystallogr. 28 803
4. Aristov V V, Mordkovich V N, Nikulin A Yu, Snigirev A A, Winter U, Erokhin Yu N and Zaumseil P 1990 Phys. Status Solidi a 120 K1
5. Nikulin A Yu, Stevenson A W, Hashizume H, Wilkins S W, Cookson D, Foran G and Garrett R F 1995 J. Appl. Crystallogr. 28 57
6. Petrashen P V and Chukhovskii FN 1989 Sov. Phys. Dokl. 34 957
7. Nikulin A Yu, Stevenson A W and Hashizume H 1996 Phys. Rev. B 53 8277
8. Takagi S 1969 J. Phys. Soc. Japan 26 1239
9. Mordkovich V N 1989 private communication