Band gap engineering of thin-film electroluminescent devices

Applied Physics Letters

Volumn 78, Issue 21, 2001, Pages 3223-3225

  Krasnov, Alexey N ^a  

^a Luxell Technologies Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040160880     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1374236     Document Type: Article

References (13)

1. R. Mach and G. O. Muller, Phys. Status Solidi A 81, 609 (1984).
2. P. De Visschere and K. Neyts, J. Lumin. 52, 313 (1992).
3. A. N. Krasnov and P. G. Hofstra, Prog. Cryst. Growth Charact. Mater. (accepted for publication).
4. A. N. Krasnov, P. G. Hofstra, and M. T. McCullough, J. Vac. Sci. Technol. A 18, 671 (2000).
5. J. Benoit, C. Barthou, and P. Benalloul, J. Appl. Phys. 73, 1435 (1993).
6. R. Mach, J. von Kalhen, G. O. Muller, W. Gericke, and G. U. Reinsperger, J. Appl. Phys. 54, 4657 (1983).
7. A. N. Krasnov, R. C. Bajear, and P. G. Hofstra, J. Vac. Sci. Technol. A 16, 906 (1998).
8. K. K. Thornber, J. Appl. Phys. 52, 279 (1981).
9. X. Zeng and M. Huang, J. Lumin. 40, 913 (1988).
10. A. N. Krasnov, Appl. Phys. Lett. 74, 1120 (1999).
11. W. Walukiewicz, Mater. Res. Soc. Symp. Proc. 148, 137 (1989).
12. J. M. Jarem and V. P. Singh, IEEE Trans. Electron Devices 35, 1834 (1988).
13. R. Barker, J. Lumin. 23, 101 (1981).