Bulk growth of single-crystal cubic silicon carbide by vacuum sublimation method

Japanese Journal of Applied Physics

Volumn 32, Issue 5 A, 1993, Pages L645-L647

  Furukawa, Katsuki ^a   Tajima, Yoshimitsu ^a   Saito, Hajime ^a   Fujii, Yoshihisa ^a   Suzuki, Akira ^a   Nakajima, Shigeo ^a  

^a Corporate Research and Development Group ^*  (Japan)

Author keywords

Bulk crystal; Cubic silicon carbide; Double positioning boundaries; Single crystal; Sublimation

Indexed keywords

CRYSTAL GROWTH; ELECTRON DIFFRACTION; RAMAN SPECTROSCOPY; SUBLIMATION;

BULK CRYSTALS; SINGLE CRYSTALS;

SILICON CARBIDE;

EID: 0027592478     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L645     Document Type: Article

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