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Volumn 166, Issue , 2000, Pages 793-797

Influence of defects on the photoluminescence of pulsed-laser deposited Er-doped amorphous Al2O3 films

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; DEPOSITION; DOPING (ADDITIVES); ELECTRON IRRADIATION; ERBIUM; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; RADIATION DAMAGE;

EID: 0039695577     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)01178-7     Document Type: Article
Times cited : (40)

References (14)
  • 2
    • 58749109441 scopus 로고    scopus 로고
    • Rare-Earth-Doped Devices
    • in: E. Honkannen (Ed.)
    • J. Shmulovich, in: E. Honkannen (Ed.), Rare-Earth-Doped Devices, Proc. SPIE 2996 (1997) 143.
    • (1997) Proc. SPIE , vol.2996 , pp. 143
    • Shmulovich, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.