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Volumn 14, Issue 5, 1996, Pages 3248-3251

0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metal

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039487731     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588815     Document Type: Article
Times cited : (3)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.