Electron beam lithography and resist processing for the fabrication of T-gate structures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1089, Issue , 1989, Pages 124-131

  Tiberio, R C ^a   Limber, J M ^a   Galvin, G J ^a   Wolf, E D ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; FIELD EFFECT TRANSISTORS; ION BEAMS; MULTILAYERS; X RAYS;

DEVELOPMENT PROCESS; DEVICE PERFORMANCE; DIRECT WRITE ELECTRON-BEAM LITHOGRAPHY; END-TO-END RESISTANCE; LARGE CROSS-SECTIONS; MODULATION-DOPED FIELD EFFECT TRANSISTORS; MULTILAYER RESISTS; RESIST DEVELOPMENT;

FABRICATION;

EID: 0000881669     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.968521     Document Type: Conference Paper

References (11)

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3. M. Hatzakis, “RMMA copolymers as high sensitivity electron resists” J. Vac. Sci. Technol. 16(6), 1984-1988 (1979).
4. Y. Todokoro, “Double layer resist films for submicrometer electron beam lithography” TEEE Trans. Electron Dev., ED-27, 1443 (1980).
5. P.C. Chao et al., “Electron beam fabrication of quarter micron T-shaped gate FETs using tri-layer resist” IHM Tech Digest 1983, 613-616 (1983).
6. KTI Chemicals, 1170 Sonora Ct, Sunnyvale CA 94086.
7. R. E. Jewett et al., “Line-Profile Resist Development Simulation Techniques” Polymer Engineering and Science, 17 No.6, 381-384 (1977).
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9. Leitz Interactive Film Thickness Measurement System.
10. S. Johnson, J. A. McMillan, et al., “Electron Beam Metrology for Integrated Circuit Structures: Predictions and Experiments”, this conference.
11. F. Rodriguez, “Molecular weight dependence of E-beam resist sensitivity” Proceedings of American Chemical Society Meeting, April, 1989.