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Volumn 79, Issue 21, 2001, Pages 3458-3460

Bulk stress due to surface damage of crystalline silicon and germanium

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EID: 0039436343     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1418268     Document Type: Article
Times cited : (5)

References (18)
  • 2
    • 0005557983 scopus 로고
    • W. C. Dash, Phys. Rev. 98, 1536 (1955); S. R. Lederhandler, J. Appl. Phys. 30, 1631 (1959).
    • (1955) Phys. Rev. , vol.98 , pp. 1536
    • Dash, W.C.1
  • 9
    • 0032305772 scopus 로고    scopus 로고
    • I. Zarudi and L. Zhang, J. Mater. Sci. Lett. 15, 586 (1996); J. Mater. Process. Technol. 84, 149 (1998).
    • (1998) J. Mater. Process. Technol. , vol.84 , pp. 149
  • 11
    • 0040860504 scopus 로고    scopus 로고
    • note
    • The phosphorus-doped Si was obtained by neutron transmutation of essentially undoped Si.
  • 17
    • 0040860503 scopus 로고    scopus 로고
    • private communication
    • E. E. Haller (private communication).
    • Haller, E.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.