Central-cell corrections for Si and S in GaAs in a strong magnetic field

Journal of Applied Physics

Volumn 85, Issue 2, 1999, Pages 893-896

  Heron, R J ^a   Lewis, R A ^a   Simmonds, P E ^a   Starrett, R P ^b   Skougarevsky, A V ^b   Clark, R G ^b   Stanley, C R ^c  

^a UNIVERSITY OF WOLLONGONG   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039394419     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369351     Document Type: Article

References (30)

1. M. J. Ashwin, R. C. Newman, and K. Muraki, J. Appl. Phys. 82, 137 (1997).
2. H. W. Kunert and D. J. Brink, J. Appl. Phys. 81, 6948 (1997).
3. R. Apiwatwaja, R. Gwilliam, R. Wilson, and B. J. Sealy, J. Appl. Phys. 81, 1131 (1997).
4. H. Sigg, J. A. A. J. Perenboom, P. Pfeffer, and W. Zawadzki, Solid State Commun. 61, 685 (1987).
5. T. Ruf, and M. Cardona, Phys. Rev. B 41, 10747 (1990).
6. M. A. Hopkins, R. J. Nicholas, P. Pfeffer, W. Zawadzki, D. Gauthier, J. C. Portal, and M. A. DiForte-Poisson, Semicond. Sci. Technol. 2, 568 (1987).
7. A. J. van der Sluijs, K. K. Geerinck, T. O. Klaassen, W. Th. Wenckebach, and C. T. Foxon, J. Appl. Phys. 75, 3698 (1994).
8. R. A. Cooke, R. A. Hoult, R. F. Kirkman, and R. A. Stradling, J. Phys. D 11, 945 (1978).
9. C. J. Armistead, P. Knowles, S. P. Najda, and R. A. Stradling, J. Phys. C 17, 6415 (1984).
10. G. E. Stillman, T. S. Low, and B. Lee, Solid State Commun. 53, 1041 (1985).
11. A. van Klarenbosch, J. Burghoorn, T. O. Klaassen, and W. Th. Wenckebach, in Shallow Impurities in Semiconductors 1988, edited by B. Monemar, IOP Conference Proceedings No. 95 (Institute of Physics, London, 1989), p. 277.
12. R. T. Grimes, M. B. Stanaway, J. M. Chamberlain, M. Henini, and O. H. Hughes, Semicond. Sci. Technol. 4, 548 (1989).
13. S. P. Najda, S. Holmes, R. A. Stradling, and F. Kuchar, Semicond. Sci. Technol. 4, 791 (1989).
14. A. van Klarenbosch, T. O. Klaassen, W. Th. Wenckebach, and C. T. Foxon, J. Appl. Phys. 67, 6323 (1990).
15. H. R. Fetterman, D. M. Larsen, G. E. Stillman, P. E. Tannenwald, and J. Waldman, Phys. Rev. Lett. 26, 975 (1971).
16. P. W. Barmby, J. L. Dunn, C. A. Bates, and T. O. Klaassen, Phys. Rev. B 54, 8566 (1996).
17. S. P. Najda, S. Takeyama, N. Miura, P. Pfeffer, and W. Zawadzki, Phys. Rev. B 40, 6189 (1989).
18. L. C. Brunel, S. Huant, M. Baj, and W. Trzeciakowski, Phys. Rev. B 33, 6863 (1986).
19. R. H. Garstang, Rep. Prog. Phys. 40, 105 (1977).
20. W. Rösner, G. Wunner, H. Herold, and H. Ruder, J. Phys. B 17, 29 (1984).
21. P. C. Makado, and N. C. McGill, J. Phys. C 19, 873 (1986).
22. D. Cabib, E. Fabri, and G. Fiorio, Solid State Commun. 9, 1517 (1971).
23. R. G. Clark et al., Physica B 201, 565 (1994).
24. Edinburgh Instruments, Riccarton, Currie, Edinburgh EH14 4AP, UK.
25. Oxford Instruments, Old Station Way, Eynsham, Witney, Oxon OX8 1TL, UK.
26. R. A. Lewis, R. J. Heron, R. G. Clark, R. P. Starrett, and A. V. Skougarevsky, in High Magnetic Fields in Semiconductor Physics II, edited by G. Landwehr and W. Ossau (World Scientific, Singapore, 1997), p. 1017.
27. C. R. Stanley, M. C. Holland, A. H. Kean, M. B. Stanaway, R. T. Grimes, and J. M. Chamberlain, Appl. Phys. Lett. 58, 478 (1991).
28. S. P. Najda, C. J. Armistead, C. Trager, and R. A. Stradling, Semicond. Sci. Technol. 4, 439 (1989).
29. Z. Chen, Z. Chen, P. L. Liu, G. L. Shi, C. M. Hu, X. H. Shi, and S. C. Shen, J. Appl. Phys. 81, 6183 (1997).
30. J. G. Michels, R. J. Warburton, R. J. Nicholas, and C. R. Stanley, Semicond. Sci. Technol. 9, 198 (1994).