Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe insertion layers: Comparison with Si insertion layers

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 23, 1997, Pages 14933-14936

  Saito, Toshio ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039392473     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.14933     Document Type: Article

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