Effect of extrusion temperature and dopant on thermoelectric properties for hot-extruded p-type Te-doped Bi0.5Sb1.5Te3 and n-type SbI3-doped Bi2Te2.85Se0.15

Materials Science and Engineering B

Volumn 54 B54, Issue 3, 1998, Pages 135-140

  Seo, J ^a   Lee, C ^a   Park, K ^b  

^a Inha University   (South Korea)

^b Chungju National University   (South Korea)

Author keywords

Dopant; Hot extrusion; SbI3 doped Bi2Te2.85Se0.15; Te doped Bi0.5Sb1.5; Te3

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; METAL EXTRUSION; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTOR DOPING; TELLURIUM; THERMOELECTRICITY;

FIGURE OF MERIT; HOT EXTRUSION;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0039390295     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(97)00285-7     Document Type: Article

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