Microstructural and thermoelectric properties of p-type Te-doped Bi0.5Sb1.5Te3 and n-type SbI3-doped Bi2Te2.85Se0.15 compounds

Materials Research Society Symposium - Proceedings

Volumn 478, Issue , 1997, Pages 127-132

  Seo, J ^a   Park, K ^a   Lee, C ^a   Kim, J ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); HIGH TEMPERATURE EFFECTS; HOT PRESSING; SEMICONDUCTING ANTIMONY; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING; THERMOELECTRICITY;

BISMUTH ANTIMONY TELLURIDE; BISMUTH TELLURIUM SELENIDE; FIGURE OF MERIT;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 0030648470     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-478-127     Document Type: Conference Paper

References (4)