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Volumn 2, Issue 2, 1996, Pages 103-108
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Nucleation of highly oriented diamond on silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
BIAS VOLTAGE;
CRYSTALLIZATION;
DEPOSITION;
DIAMOND FILMS;
EMISSION SPECTROSCOPY;
ETCHING;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
HYDROCARBONS;
HYDROGEN;
NUCLEATION;
SILICON;
SILICON ON INSULATOR TECHNOLOGY;
BIAS ENHANCED NUCLEATION AND GROWTHS;
BIAS-ENHANCED NUCLEATION;
DEPOSITION CONDITIONS;
HIGHLY ORIENTED DIAMONDS;
HYDROCARBON RADICALS;
METHANE CONCENTRATIONS;
OPTICAL EMISSION SPECTRA;
SUBSTRATE TEMPERATURE;
SUBSTRATES;
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EID: 0039383749
PISSN: 12259438
EISSN: None
Source Type: Journal
DOI: 10.1007/bf03025953 Document Type: Article |
Times cited : (3)
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References (16)
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