Amplification of transverse acoustic phonons in quantum well heterostructures with piezoelectric interaction

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 3934-3941

  Komirenko, S M ^a   Kim, K W ^a   Demidenko, A A ^b   Kochelap, V A ^b   Stroscio, M A ^c  

^a North Carolina State University   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0039149675     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402145     Document Type: Article

References (20)

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11. Strong experimental evidences of the existence of confined acoustic phonons in Ge/SiGe QWs and interface (leaky) waves at AlGaAs/GaAs interface were obtained from measurements of magnetoresistance oscillations at low temperature: S. H. Song, W. Pan, and D. C. Tsui, Appl. Phys. Lett. 70, 3422 (1997); M. A. Zudov, I. V. Ponomarev, A. L. Efros, R. R. Du, and J. A. Simmons, and J. L. Reno, cond-mat/0005036-02/05/2000.
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