Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

Materials Science and Engineering: A

Volumn 253, Issue 1-2, 1998, Pages 269-274

  Agarwal, Aditya ^a,c   Gossmann, H J ^a   Eaglesham, D J ^a   Pelaz, L ^a   Jacobson, D C ^a   Poate, J M ^a,d   Haynes, T E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c EATON CORPORATION   (United States)

^d NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Shallow junction; Silicon boride phase formation; TEM; Transient enhanced diffusion; Very low energy ion implantation; 311 Defects

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; ION IMPLANTATION; PHASE COMPOSITION; POINT DEFECTS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ACTIVATION ANNEALING; PHASE FORMATION; SHALLOW JUNCTION; TRANSIENT ENHANCED DIFFUSION;

SEMICONDUCTING SILICON;

EID: 0038934466     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5093(98)00735-7     Document Type: Article

References (26)

1. National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, 1995.
2. P. Singer, Semiconductors International, June, 72, 1996.
3. K. Cho, M. Numan, T.G. Finstad, W.K. Chu, J. Liu, J.J. Wortman, Appl. Phys. Lett. 47 (1985) 1321.
4. A.E. Michel, Appl. Phys. Lett. 51 (1987) 487.
5. M. Servidori, R. Angelucci, F. Cembali, P. Negrini, S. Solmi, P. Zaumseil, U. Winter, J. Appl. Phys. 61 (1834) 1987).
6. A.E. Michel, Nucl. Instrum. Methods Phys. Res. B 37/38 (1989) 379.
7. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, H.S. Luftman, J.M. Poate, MRS Symp. Proc. 354 (1995).
8. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, J.M. Poate, Appl. Phys. Lett. 65 (1994) 2305.
9. I.G. Salisbury, M.H. Loretto, Phil. Mag. A 39 (1979) 317.
10. S. Takeda, Jpn. J. Appl. Phys. 30 (1991) L639.
11. N.E.B. Cowern, K.T.F. Janssen, H.F.F. Jos, J. Appl. Phys. 68 (1990) 6191.
12. G.D. Watkins, In: P. Baruch (Ed.), Radiation Damage in Semiconductors, 1964, p. 97.
13. D.R. Lim, C.S. Rafferty, F.P. Klemens, Appl. Phys. Lett. 67 (1995) 2302.
14. A. Agarwal, D.J. Eaglesham, H.-J. Gossmann, D.C. Jacobson, T.E. Haynes, Y.E. Erokhin, J.M. Poate, Appl. Phys. Lett. 70 (1997) 3332.
15. A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, L. Pelaz, D.C. Jacobson, T.E. Haynes, Y.E. Erokhin, Appl. Phys. Lett. 71 (1997) 3141.
16. A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, T.E. Haynes, Y.E. Erokhin, R. Simonton, J.M. Poate, Proceedings of the Ultra-Shallow Junction Workshop, Raleigh, 1997.
17. A. Bourret, J. Appl. Phys. 55 (1984) 825.
18. J.P. Biersack, L.G. Haggmark, Nucl. Instrum. Methods 174 (1980) 257.
19. H.-J. Gossmann, F.C. Unterwald, H.S. Luftman, J. Appl. Phys. 73 (1993) 8237.
20. M.R. Pinto, D.M. Boulin, C.S. Rafferty, R.K. Smith, J.W.M. Coughran, I.C. Kizilyalli, M.J. Thoma, IEDM 92, p. 923.
21. H.-J. Gossmann, A.M. Vredenberg, C.S. Rafferty, H.S. Luftman, F.C. Unterwald, D.C. Jacobson, T. Boone, J.M. Poate, J. Appl. Phys. 74 (1993) 3150.
22. R.B. Fair, J.C.C. Tsai, J. Electrochem. Soc. 124 (1977) 1107.
23. M.H. Loretto, Electron Beam Analysis of Materials, Chapman and Hall, London, 1994.
24. B. Magnusson, C. Brosset, Acta Chem. Scand. 16 (1962) 449.
25. C.W. Ong, K.P. Chik, H.K. Wong, J. Appl. Phys. 74 (1993) 6094.
26. K.S. Jones, D.K. Sadana, S. Prussin, J. Washburn, E.R. Weber, W.J. Hamilton, J. Appl. Phys. 63 (1988) 1414.