Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 79, Issue 11, 1999, Pages 2617-2628

  Edelman, F ^a   Raz, T ^a   Komem, Y ^a   Zaumseil, P ^b   Osten, H J ^b   Capitan, M ^c  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b IHP   (Germany)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038929165     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619908212013     Document Type: Article

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