SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 737, Issue , 2003, Pages 649-654

Evidence of Ti-related inclusions in an Al alloy interconnecting layer for nanometer 256Mbit DRAM semiconductor devices characterized by TEM, STEM, EELS elemental mapping, and XEDS linescan

(2) Zhao, Wei Wayne a Graca, Steve a

a INFINEON TECHNOLOGIES (United States)

Author keywords

DRAM; Dynamic random access memory; EDS; Elemental mapping; Energy loss electron spectroscopy EELS; Linescan; Scanning transmission electron microscopy STEM; Semiconductor; TEM; Transmission electron microscopy

Indexed keywords

ALUMINUM ALLOYS; ELECTRIC POTENTIAL; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISPERSIVE SPECTROSCOPY; INCLUSIONS; SEMICONDUCTOR STORAGE; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

ELEMENTAL MAPPING; FIELD EMISSION GUN; METAL INTERCONNECTING LAYER; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0038825852 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

References (9)

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- Zhao, W.¹ Luzzi, D.E.²

4
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- Zhao, W.¹

5
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- Zhao, W.¹ Liaw, P.K.² Joy, D.C.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.