Effect of Cl/H input ratio on the growth rate of MoSi2 coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl4-H2 precursor gases

Surface and Coatings Technology

Volumn 172, Issue 2-3, 2003, Pages 176-183

  Yoon, Jin Kook ^a   Kim, Gyeung Ho ^a   Byun, Ji Young ^a   Lee, Jong Kwon ^a   Yoon, Ho Sang ^b   Hong, Kyung Tae ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b NOVATEMS Inc   (South Korea)

Author keywords

Etching effect; Growth rate; Molybdenum; MoSi2 coating; Si chemical vapor deposition (CVD)

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DIFFUSION IN SOLIDS; ETCHING; SUBSTRATES; THERMODYNAMICS;

MASS BALANCE;

INORGANIC COATINGS;

VAPOR DEPOSITION;

EID: 0038792657     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(03)00428-6     Document Type: Article

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