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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 B, 2003, Pages

Photovoltaic properties of boron-incorporated amorphous carbon on n-Si heterojunction grown by radio frequency plasma-enhanced chemical vapor deposition using trimethylboron

(3) Hayashi, Yasuhiko a Soga, Tetsuo a Jimbo, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Amorphous carbon; Boron incorporation; Photovoltaic characteristics; Radio frequency plasma enhanced chemical vapor deposition

Indexed keywords

AMORPHOUS MATERIALS; BORON COMPOUNDS; CARBON; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; LIGHT ABSORPTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SOLAR CELLS; THIN FILMS;

AMORPHOUS CARBON; PHOTOVOLTAIC CHARACTERISTIC; RADIO-FREQUENCY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

HETEROJUNCTIONS;

EID: 0038784370 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l273 Document Type: Letter

Times cited : (4)

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