Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4754, Issue , 2002, Pages 880-889

  Sugawara, Minoru ^a   Ito, Masaaki ^a   Chiba, Akira ^a   Hoshino, Eiichi ^a   Yamanashi, Hiromasa ^a   Hoko, Hiromasa ^a   Ogawa, Taro ^a   Lee, Byoung Taek ^a   Yoneda, Takashi ^a   Takahashi, Masashi ^a   Nishiyama, Iwao ^a   Okazaki, Shinji ^a  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

Author keywords

Multilayer; Phase shifting mask; Reflectance; Thickness variation

Indexed keywords

LIGHT REFLECTION; MASKS; MOLYBDENUM; MONOLAYERS; SILICON; ULTRAVIOLET RADIATION;

MASK BLANK;

ELECTRON BEAM LITHOGRAPHY;

EID: 0038768424     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.476991     Document Type: Conference Paper

References (7)

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