Resistance of Ni nanowires fabricated by STM-CVD

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3009, Issue , 1997, Pages 2-6

  Wang, Xiang Dong ^a   Rubel, Scott E ^a   Purbach, Ulrich ^a   De Lozanne, Alejandro L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Nickel; Resistance; Scanning tunneling microscope; STM CVD; Weak localization; Wires

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; ELECTRIC FIELDS; ELECTRIC PROPERTIES; ELECTRIC WIRE; FABRICATION; MACHINING; MICROMACHINING; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; NANOWIRES; NICKEL; NICKEL ALLOYS; SCANNING; SILICIDES; STOICHIOMETRY; THICKNESS MEASUREMENT; TUNGSTEN;

RESISTANCE; SCANNING TUNNELING MICROSCOPE; STM-CVD; WEAK LOCALIZATION; WIRES;

WIRE;

EID: 0038764378     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.271214     Document Type: Conference Paper

References (6)

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6. X.-D. Wang, S. Rubel, U. Purbach, and A. L. de Lozanne, to be published.