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1
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0345903701
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Ablation of metals by ultrashort laser pulses
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S. Nolte, C. Momma, H. Jacobs, A. Tünnermann, B.N. Chickov, B. Wellegehausen, H. Wellig, "Ablation of metals by ultrashort laser pulses" J. Opt. Soc. Am. B, 14, 2716, (1997).
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(1997)
J. Opt. Soc. Am. B
, vol.14
, pp. 2716
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Nolte, S.1
Momma, C.2
Jacobs, H.3
Tünnermann, A.4
Chickov, B.N.5
Wellegehausen, B.6
Wellig, H.7
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2
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4644342675
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Femtosecond time-resolved surface structural dynamics of optically excited silicon
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C.V. Shank, R. Yen, C. Hirlimann, "Femtosecond time-resolved surface structural dynamics of optically excited silicon" Phys. Rev. Lett. 51, 900, (1983);
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(1983)
Phys. Rev. Lett
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, pp. 900
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Shank, C.V.1
Yen, R.2
Hirlimann, C.3
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3
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0001375413
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Time resolved study of laser-induced disorder of Si surfaces
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W.K. Tom, G.D. Aumiller, C.H. Brito Cruz, "Time resolved study of laser-induced disorder of Si surfaces" Phys. Rev. Lett. 60, 1438, (1988);
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(1988)
Phys. Rev. Lett
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, pp. 1438
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Tom, W.K.1
Aumiller, G.D.2
Brito Cruz, C.H.3
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4
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0001034485
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Ultrafast electronic disordering during femtosecond laser melting of GaAs
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P. Saeta, J.K. Wang, Y. Siegal, N. Bloembergen, E. Mazur "Ultrafast electronic disordering during femtosecond laser melting of GaAs" Phys. Rev. Lett. 67, 1023, (1991);
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(1991)
Phys. Rev. Lett
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Saeta, P.1
Wang, J.K.2
Siegal, Y.3
Bloembergen, N.4
Mazur, E.5
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5
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35949007515
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Ultrafast laser-induced order-disorder transitions in semiconductors
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K. Sokolowski-Tinten, J. Bialkowski, D. von der Linde, "Ultrafast laser-induced order-disorder transitions in semiconductors" Phys. Rev. B 51, 14186, (1995).
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(1995)
Phys. Rev. B
, vol.51
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Sokolowski-Tinten, K.1
Bialkowski, J.2
von der Linde, D.3
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6
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35949007430
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Laser-pulse sputtering of aluminum, Vaporisation, boiling, superheating and gas-dynamics effects
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A. Peterolongo, A. Miotello, R. Kelley, "Laser-pulse sputtering of aluminum, Vaporisation, boiling, superheating and gas-dynamics effects"Phys. Rev. E, 50, 4716, (1994);
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(1994)
Phys. Rev. E
, vol.50
, pp. 4716
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Peterolongo, A.1
Miotello, A.2
Kelley, R.3
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7
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0031076501
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Laser-solid interaction in the femtosecond regime
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D. von der Linde, K. Sokolowski-Tinten, J. Bialkowski, "Laser-solid interaction in the femtosecond regime" Appl. Surf. Sci. 109/110, 1, (1996);
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(1996)
Appl. Surf. Sci
, vol.109-110
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von der Linde, D.1
Sokolowski-Tinten, K.2
Bialkowski, J.3
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8
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61349146768
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Observation of a transient insulating phase during short pulse laser ablation of metals and semiconductors to be published on Appl
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K. Sokolowski-Tinten, J. Bialkowski, A. Cavalleri, D. von der Linde, "Observation of a transient insulating phase during short pulse laser ablation of metals and semiconductors" to be published on Appl. Surf. Sci
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Surf. Sci
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Sokolowski-Tinten, K.1
Bialkowski, J.2
Cavalleri, A.3
von der Linde, D.4
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10
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0022693802
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Observation of superheating during picosecond laser melting
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N. Fabricius, P. Hermes, D. von der Linde, A. Pospiesczyk, B. Stritzker, "Observation of superheating during picosecond laser melting" Sol. State Comm. 58, 239, (1986);
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(1986)
Sol. State Comm
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, pp. 239
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Fabricius, N.1
Hermes, P.2
von der Linde, D.3
Pospiesczyk, A.4
Stritzker, B.5
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11
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2442470238
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Evaporation of atoms from femtosecond laser-heated gallium arsenide
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P. Hermes, B. Danielzik, D. von der Linde, J. Kuhl, J. Heppner, B. Stritzker, A. Pospieszczyk, "Evaporation of atoms from femtosecond laser-heated gallium arsenide" Appl. Phys. A 36, 1, (1986).
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(1986)
Appl. Phys. A
, vol.36
, pp. 1
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Hermes, P.1
Danielzik, B.2
von der Linde, D.3
Kuhl, J.4
Heppner, J.5
Stritzker, B.6
Pospieszczyk, A.7
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12
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84975633474
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Simple technique for measurements of pulsed Gaussian-beam spot sizes
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J.M. Liu "Simple technique for measurements of pulsed Gaussian-beam spot sizes"Opt. Lett.. 7, 196, (1982).
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(1982)
Opt. Lett
, vol.7
, pp. 196
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Liu, J.M.1
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13
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0009420422
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Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces
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H. Tanaka and T. Kanayama, "Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces" J. Vac. Sci. Technol. B, 15, 1613, (1997).
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(1997)
J. Vac. Sci. Technol. B
, vol.15
, pp. 1613
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Tanaka, H.1
Kanayama, T.2
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14
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0001562975
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On the effect of Knudsen-layer formation on studies of vaporisation, sputtering and desorption
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R. Kelley, R.W. Dreyfus, "On the effect of Knudsen-layer formation on studies of vaporisation, sputtering and desorption" Surf. Sci. 198, 263, (1988);
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(1988)
Surf. Sci
, vol.198
, pp. 263
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Kelley, R.1
Dreyfus, R.W.2
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15
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61349187261
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Laserinduzierte Prozesse an Festkö rperoberflachen
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Ph.D. thesis, University of Essen
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B. Danielzik, "Laserinduzierte Prozesse an Festkö rperoberflachen" Ph.D. thesis, University of Essen, (1988).
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(1988)
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Danielzik, B.1
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16
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0012025863
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Emission of ions during laser heating of semiconductors has been observed in a number of experiments e.g. J.M. Liu et al. Phase transformation and charged particle emission from a silicon crystal surface induced by picosecond laser pulses Appl. Phys. Lett. 39, 755, 1981
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Emission of ions during laser heating of semiconductors has been observed in a number of experiments (e.g. J.M. Liu et al. "Phase transformation and charged particle emission from a silicon crystal surface induced by picosecond laser pulses" Appl. Phys. Lett. 39, 755, (1981)).
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17
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0027671527
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evidence of a nonthermal mechanism for ejection of ions and neutrals during excimer laser ablation of Ge
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A discussion of its possible origin can be found in
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A discussion of its possible origin can be found in J. Solis et al. "evidence of a nonthermal mechanism for ejection of ions and neutrals during excimer laser ablation of Ge" J. Appl. Phys. 74, 4271, (1993).
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(1993)
J. Appl. Phys
, vol.74
, pp. 4271
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Solis, J.1
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18
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61349170891
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The QMS used in the present experiment is limited to 300 a.m.u. We therefore cannot detect Arsenic molecules with more than 4 atoms
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The QMS used in the present experiment is limited to 300 a.m.u. We therefore cannot detect Arsenic molecules with more than 4 atoms.
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