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Volumn 3343, Issue , 1998, Pages 334-343

Time-of-flight mass spectroscopy of femtosecond laser ablation of solid surfaces

Author keywords

Ablation; Femtosecond pulses; Knudsen layer theory; Semiconductors; Silcon clusters; Surface temperature measurements; Two phase regime

Indexed keywords

ARSENIC COMPOUNDS; ATMOSPHERIC TEMPERATURE; ATOMS; CRYSTALS; DESORPTION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC PULSE; GALLIUM ALLOYS; GALLIUM COMPOUNDS; LASER ABLATION; LASERS; MASS SPECTROMETERS; MASS SPECTROMETRY; NEGATIVE IONS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; TEMPERATURE MEASUREMENT;

EID: 0038733922     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.321541     Document Type: Conference Paper
Times cited : (1)

References (18)
  • 2
    • 4644342675 scopus 로고
    • Femtosecond time-resolved surface structural dynamics of optically excited silicon
    • C.V. Shank, R. Yen, C. Hirlimann, "Femtosecond time-resolved surface structural dynamics of optically excited silicon" Phys. Rev. Lett. 51, 900, (1983);
    • (1983) Phys. Rev. Lett , vol.51 , pp. 900
    • Shank, C.V.1    Yen, R.2    Hirlimann, C.3
  • 3
    • 0001375413 scopus 로고
    • Time resolved study of laser-induced disorder of Si surfaces
    • W.K. Tom, G.D. Aumiller, C.H. Brito Cruz, "Time resolved study of laser-induced disorder of Si surfaces" Phys. Rev. Lett. 60, 1438, (1988);
    • (1988) Phys. Rev. Lett , vol.60 , pp. 1438
    • Tom, W.K.1    Aumiller, G.D.2    Brito Cruz, C.H.3
  • 4
    • 0001034485 scopus 로고
    • Ultrafast electronic disordering during femtosecond laser melting of GaAs
    • P. Saeta, J.K. Wang, Y. Siegal, N. Bloembergen, E. Mazur "Ultrafast electronic disordering during femtosecond laser melting of GaAs" Phys. Rev. Lett. 67, 1023, (1991);
    • (1991) Phys. Rev. Lett , vol.67 , pp. 1023
    • Saeta, P.1    Wang, J.K.2    Siegal, Y.3    Bloembergen, N.4    Mazur, E.5
  • 5
    • 35949007515 scopus 로고
    • Ultrafast laser-induced order-disorder transitions in semiconductors
    • K. Sokolowski-Tinten, J. Bialkowski, D. von der Linde, "Ultrafast laser-induced order-disorder transitions in semiconductors" Phys. Rev. B 51, 14186, (1995).
    • (1995) Phys. Rev. B , vol.51 , pp. 14186
    • Sokolowski-Tinten, K.1    Bialkowski, J.2    von der Linde, D.3
  • 6
    • 35949007430 scopus 로고
    • Laser-pulse sputtering of aluminum, Vaporisation, boiling, superheating and gas-dynamics effects
    • A. Peterolongo, A. Miotello, R. Kelley, "Laser-pulse sputtering of aluminum, Vaporisation, boiling, superheating and gas-dynamics effects"Phys. Rev. E, 50, 4716, (1994);
    • (1994) Phys. Rev. E , vol.50 , pp. 4716
    • Peterolongo, A.1    Miotello, A.2    Kelley, R.3
  • 8
    • 61349146768 scopus 로고    scopus 로고
    • Observation of a transient insulating phase during short pulse laser ablation of metals and semiconductors to be published on Appl
    • K. Sokolowski-Tinten, J. Bialkowski, A. Cavalleri, D. von der Linde, "Observation of a transient insulating phase during short pulse laser ablation of metals and semiconductors" to be published on Appl. Surf. Sci
    • Surf. Sci
    • Sokolowski-Tinten, K.1    Bialkowski, J.2    Cavalleri, A.3    von der Linde, D.4
  • 12
    • 84975633474 scopus 로고
    • Simple technique for measurements of pulsed Gaussian-beam spot sizes
    • J.M. Liu "Simple technique for measurements of pulsed Gaussian-beam spot sizes"Opt. Lett.. 7, 196, (1982).
    • (1982) Opt. Lett , vol.7 , pp. 196
    • Liu, J.M.1
  • 13
    • 0009420422 scopus 로고    scopus 로고
    • Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces
    • H. Tanaka and T. Kanayama, "Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces" J. Vac. Sci. Technol. B, 15, 1613, (1997).
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1613
    • Tanaka, H.1    Kanayama, T.2
  • 14
    • 0001562975 scopus 로고
    • On the effect of Knudsen-layer formation on studies of vaporisation, sputtering and desorption
    • R. Kelley, R.W. Dreyfus, "On the effect of Knudsen-layer formation on studies of vaporisation, sputtering and desorption" Surf. Sci. 198, 263, (1988);
    • (1988) Surf. Sci , vol.198 , pp. 263
    • Kelley, R.1    Dreyfus, R.W.2
  • 15
    • 61349187261 scopus 로고
    • Laserinduzierte Prozesse an Festkö rperoberflachen
    • Ph.D. thesis, University of Essen
    • B. Danielzik, "Laserinduzierte Prozesse an Festkö rperoberflachen" Ph.D. thesis, University of Essen, (1988).
    • (1988)
    • Danielzik, B.1
  • 16
    • 0012025863 scopus 로고    scopus 로고
    • Emission of ions during laser heating of semiconductors has been observed in a number of experiments e.g. J.M. Liu et al. Phase transformation and charged particle emission from a silicon crystal surface induced by picosecond laser pulses Appl. Phys. Lett. 39, 755, 1981
    • Emission of ions during laser heating of semiconductors has been observed in a number of experiments (e.g. J.M. Liu et al. "Phase transformation and charged particle emission from a silicon crystal surface induced by picosecond laser pulses" Appl. Phys. Lett. 39, 755, (1981)).
  • 17
    • 0027671527 scopus 로고
    • evidence of a nonthermal mechanism for ejection of ions and neutrals during excimer laser ablation of Ge
    • A discussion of its possible origin can be found in
    • A discussion of its possible origin can be found in J. Solis et al. "evidence of a nonthermal mechanism for ejection of ions and neutrals during excimer laser ablation of Ge" J. Appl. Phys. 74, 4271, (1993).
    • (1993) J. Appl. Phys , vol.74 , pp. 4271
    • Solis, J.1
  • 18
    • 61349170891 scopus 로고    scopus 로고
    • The QMS used in the present experiment is limited to 300 a.m.u. We therefore cannot detect Arsenic molecules with more than 4 atoms
    • The QMS used in the present experiment is limited to 300 a.m.u. We therefore cannot detect Arsenic molecules with more than 4 atoms.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.