Measurement of the Depth of Interaction of an LSO Scintillator Using a Planar Process APD

IEEE Transactions on Nuclear Science

Volumn 50, Issue 3, 2003, Pages 307-312

  Gramsch, Ernesto ^a   Avila, Ricardo E ^b   Bui, Peter ^c  

^a UNIVERSIDAD DE SANTIAGO DE CHILE   (Chile)

^b Chilean Nuclear Energy Commission   (Chile)

^c UDT Sensors Inc   (United States)

Author keywords

Avalanche photodiode; depth of interaction; LSO scintillator; PET module

Indexed keywords

AVALANCHE DIODES; BORON; DIFFUSION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; LUTETIUM COMPOUNDS; PHOSPHORS; PHOTONS; POSITION MEASUREMENT; POSITRON EMISSION TOMOGRAPHY; SODIUM;

AVALANCHE PHOTODIODES; DEPTH OF INTERACTION; FULL WIDTH AT HALF MAXIMUM; LUTETIUM OXYORTHOSILICATE SCINTILLATOR; SILICON DEVICES; STANDARD PLANAR TECHNOLOGY;

PHOTODIODES;

EID: 0038720382     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2003.812430     Document Type: Article

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