Room-temperature dual excitonic emission from amorphous ZnO

Chinese Physics Letters

Volumn 20, Issue 5, 2003, Pages 696-699

  Wang, Zhi Jian ^a   Wang, Zhi Jun ^a   Zhang, Li Gong ^a   Yuan, Jin Shan ^a   Yan, Sheng Gang ^b   Wang, Chun Yan ^b  

^a CHANGCHUN INSTITUTE OF OPTICS   (China)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

II-VI SEMICONDUCTORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; ZINC OXIDE;

AMORPHOUS ZNO; ENERGY POSITION; EXCITONIC EMISSION; INTENSITY DEPENDENCE; OPTIMIZED CONDITIONS; PHOTOLUMINESCENCE INTENSITIES; QUANTUM CONFINEMENT EFFECTS; RELATIVE ENERGIES; ULTRAVIOLET EMISSION; VISIBLE EMISSIONS;

PHOTOLUMINESCENCE SPECTROSCOPY;

EID: 0038587494     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/5/330     Document Type: Article

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