Electron emission and capture kinetics of a bistable medium-deep center in n-type bulk GaAs

IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Volumn , Issue , 1996, Pages 299-302

  Shiraki, Hiroyuki ^a   Tokuda, Yutaka ^a   Sassa, Koichi ^a  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COLOR CENTERS; CRYSTAL GROWTH FROM MELT; ELECTRON EMISSION; MATHEMATICAL MODELS; THERMAL EFFECTS; VOLTAGE MEASUREMENT;

CONSTANT CAPACITANCE VOLTAGE TRANSIENT SPECTROSCOPY (CCVTS); ELECTRON CAPTURE; ELECTRON TRAPS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030381708     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)