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Volumn 55, Issue 7, 1997, Pages 4503-4505

Excitons in strained (Ga, In)Sb/GaSb quantum wells

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EID: 0038563959     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.4503     Document Type: Article
Times cited : (5)

References (18)
  • 2
    • 33749613956 scopus 로고
    • See, e.g., Properties of InGaAs, edited by P. Bhattacharya (INSPEC, London, 1993).
    • (1993) Properties of InGaAs


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.