Low-frequency Raman scattering of Be-doped cubic boron nitride

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 1133-1137

  Shishonok, E M ^a   Taniguchi, T ^b   Watanabe, K ^b   Haneda, H ^b   Kanda, H ^b  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Be acceptor; Cubic boron nitride; High pressure crystal growth; Raman scattering

Indexed keywords

CRYSTAL GROWTH; DIAMONDS; DOPING (ADDITIVES); MORPHOLOGY; RAMAN SCATTERING; SECONDARY ION MASS SPECTROMETRY;

GROWTH SOLVENTS;

CUBIC BORON NITRIDE;

DIAMOND;

EID: 0038522569     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00331-X     Document Type: Article

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