Giant suppression of shot noise in double barrier resonant diode: A signature of coherent transport

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages

  Aleshkin, V Ya ^a   Reggiani, L ^b   Alkeev, N V ^e   Lyubchenko, V E ^e   Ironside, C N ^c   Figueiredo, J M L ^c,d   Stanley, C R ^c  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b INFM   (Italy)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

^d UNIVERSITY OF ALGARVE   (Portugal)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; HYSTERESIS; RESONANT TUNNELING; SEMICONDUCTOR DIODES;

COULOMB INTERACTIONS;

SHOT NOISE;

EID: 0038509875     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/103     Document Type: Article

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