Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 3, 2003, Pages 957-959

  Guillorn, M A ^a,b   Hale, M D ^b   Merkulov, V I ^a   Simpson, M L ^a,b   Eres, G Y ^a   Cui, H ^a   Puretzky, A A ^a,b   Geohegan, D B ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; GATES (TRANSISTOR); PHOTOLITHOGRAPHY; PHYSICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

FOWLER-NORDHEIM MODEL;

FIELD EMISSION CATHODES;

EID: 0038457145     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1565343     Document Type: Article

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