Metastable phase formation in an immiscible Cu-Ta system studied by ion-beam mixing, ab initio calculation, and molecular dynamics simulation

Acta Materialia

Volumn 51, Issue 13, 2003, Pages 3885-3893

  Gong, H R ^a,b   Kong, L T ^a,b   Lai, W S ^a,b   Liu, B X ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b NANJING UNIVERSITY   (China)

Author keywords

Ab initio electron theory; Copper alloys; Ion beam mixing; Metastable phases; Molecular dynamics

Indexed keywords

AMORPHOUS MATERIALS; COMPOSITION; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; ION BEAMS; MOLECULAR DYNAMICS; SOLUBILITY;

METASTABLE PHASES;

COPPER ALLOYS;

EID: 0038451483     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-6454(03)00213-1     Document Type: Article

References (23)

1. Zielinski E.M., Vinci R.P., Bravman J.C. Effects of barrier layer and annealing on abnormal grain growth in copper thin films. J Appl Phys. 76:1994;4516-4523.
2. Kwon K.W., Ryu C., Sinclair R., Wong S.S. Evidence of heteroepitaxial growth of copper on beta-tantalum. Appl Phys Lett. 71:1997;3069-3071.
3. Lee H.J., Kwon K.W., Ryu C., Sinclair R. Thermal stability of a Cu/Ta multilayer: an intriguing interfacial reaction. Acta mater. 47:1999;3965-3975.
4. Chen L., Magtoto N., Ekstrom B., Kelber J. Effect of surface impurities on the Cu/Ta interface. Thin Solid Films. 376:2000;115-123.
5. de Boer F.R., Boom R., Mattens W.C.M., Miedema A.R., Niessen A.K. Cohesion in metals: Transition metal alloys. 1989;North-Holland, Amsterdam.
6. Liu B.X., Zhang Z.J., Jin O., Pan F. Role of interface in ion mixing of thermal annealing induced amorphization in multilayers in some immiscible systems. Mat Res Soc Symp Proc. 396:1996;71-82.
7. + ions into Cu crystals. Philos Mag B. 37:1978;615-630.
8. Nastasi M., Saris F.W., Hung L.S., Mayer J.W. Stability of amorphous Cu/Ta and Cu/W alloys. J Appl Phys. 58:1985;3052-3058.
9. Sakurai K., Yamada Y., Ito M., Lee C.H., Fukunaga T., Mizutani U. Observation of solid-state amorphization in the immiscible system Cu-Ta. Appl Phys Lett. 57:1990;2660-2662.
10. Kim J.H., Yoshioka H., Habazaki H., Kawashima A., Asami K., Hashimoto K. Phases in sputter-deposited Cu-Ta alloys. Mater Sci and Eng. A156:1992;211-216.
11. Zeng F., Ding M., Zhao B., Pan F. Amorphous alloy film formed in an immiscible Cu-Ta system by ion beam assisted deposition. Mater Lett. 53:2002;40-43.
12. Veltl G., Scholz B., Kunze H.-D. Amorphization of Cu-Ta alloys by mechanical alloying. Mater Sci and Eng. A134:1991;1410-1413.
13. Mizutani U., Lee C.H. Mechanical alloying in Cu-V and Cu-Ta systems characterized by positive heat of mixing (Overview). Mater Trans JIM. 36:1995;210-217.
14. Kwon K.W., Lee H.J., Sinclair R. Solid-state amorphization at tetragonal-Ta/Cu interfaces. Appl Phys Lett. 75:1999;935-937.
15. Liu B.X., Lai W.S., Zhang Q. Irradiation induced amorphization in metallic multilayers and calculation of glass-forming ability from atomistic potential in the binary metal systems. Mater Sci & Eng R. 244:2000;1-46.
16. Gong H.R., Kong L.T., Lai W.S., Liu B.X. Atomistic modeling of solid-state amorphization in an immiscible Cu-Ta system. Phys Rev B. 66:2002;104204.
17. Liu B.X., Lai W.S., Zhang Z.J. Solid-state crystal-to-amorphous transition in metal-metal multilayers and its thermodynamic and atomistic modelling. Adv Phys. 50:2001;367-429.
18. Alonso J.A., Simozar S. Prediction of amorphous alloy formation by ion beam mixing. Solid St Commun. 48:1983;765-767.
19. Kresse G., Hafner J. Ab initio molecular dynamics for liquid metals. Phys Rev B. 47:1993;558-561.
20. Vanderbilt D. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism. Phys Rev B. 41:1990;7892-7995.
21. Perdew J., Wang Y. Accurate and simple analytic representation of the electron-gas correlation energy. Phys Rev B. 45:1992;13244-13249.
22. Monkhorst H.J., Pack J.D. Special points for Brillouin-zone integrations. Phys Rev B. 13:1976;5188-5192.
23. Parrinello M., Rahman A. Polymorphic transitions in single crystals: A new molecular dynamics method. J Appl Phys. 52:1981;7182-7190.