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Applied Physics B: Lasers and Optics

Volumn 68, Issue 2-3, 1999, Pages 649-655

Influence of steps and defects on the dissociative adsorption of molecular hydrogen on silicon surfaces

(2) Raschke, M B a Hofer U a

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DECOMPOSITION; HYDROGEN; SECOND HARMONIC GENERATION;

DISSOCIATIVE ADSORPTION;

SEMICONDUCTING SILICON;

EID: 0033098608 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s003400050680 Document Type: Article

Times cited : (22)

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