Adsorption of Si atom on H-terminated Si(0 0 1)-2 × 1 surface

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 15-18

  Hashizume, Tomihiro ^a   Kajiyama, Hiroshi ^a   Suwa, Yuji ^a   Heike, Seiji ^a   Matsuura, S ^b   Nara, Jun ^c   Ohno, Takahisa ^c  

^a HITACHI LTD   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Adsorption; First principles; Hydrogen termination; Silicon; STM; Surface

Indexed keywords

ADSORPTION; ANNEALING; DIMERS; EPITAXIAL GROWTH; GERMANIUM ALLOYS; HYDROGEN; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE; THERMAL EFFECTS;

SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0038409819     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00481-1     Document Type: Conference Paper

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