Surface and interface study of Cu (film)/SiC (substrate) system

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 169-173

  An, Z ^a,b   Hirai, M ^a   Kusaka, M ^a   Iwami, M ^a  

^a OKAYAMA UNIVERSITY   (Japan)

^b SICHUAN UNIVERSITY   (China)

Author keywords

Copper; Diffusion and agglomeration; Interface reaction; Photoemission electron microscopy; Silicon carbide; X ray emission

Indexed keywords

COPPER; DIFFUSION; SILICON CARBIDE; SUBSTRATES; SURFACE PROPERTIES; X RAYS;

INTERFACIAL REACTIONS;

INTERFACES (MATERIALS);

EID: 0038408898     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00459-8     Document Type: Conference Paper

References (10)

1. J.A. Freitas Jr., in: G.L. Harris (Ed.), Properties of Silicon Carbide, INSPEC, The Institution of Electrical Engineers, London, UK, 1995, p. 29.
2. Lee H.-K., Lee J.-K. J. Mater. Sci. Lett. 11:1992;550.
3. Nikolopoulos P., Grubmeier H. J. Mater. Sci. 27:1992;139.
4. Qin C.-D., Derby B. Br. Ceram. Trans. J. 90:1991;124.
5. Nishimori K., Tokutaka H., Nakanishi S., Kishida S., Ishihara N. Jpn. J. Appl. Phys. 28:1989;L1345.
6. Wang Z., Wynblatt P. J. Mater. Sci. 33:1998;1177.
7. An Z., Ohi A., Hirai M., Kusaka M., Iwami M. Surf. Sci. 493:2001;182.
8. Iwami M., Hirai M., Kusaka M., Kubota M., Yamamoto S., Nakamura H., Watabe H., Kawai M., Soezima H. Jpn. J. Appl. Phys. 29:1990;1353.
9. Bauer E. J. Electron. Spectrosc. Relat. Phenom. 114-116:2001;975.
10. Soezima H. Surf. Sci. 85:1979;610.