Study of the reaction at Cu/3C-SiC interface

Surface Science

Volumn 493, Issue 1-3, 2001, Pages 182-187

  An, Z ^a   Ohi, A ^a   Hirai, M ^a   Kusaka, M ^a   Iwami, M ^a  

^a OKAYAMA UNIVERSITY   (Japan)

Author keywords

Copper; Silicon carbide; X ray emission; X ray scattering, diffraction, and reflection

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); OXIDATION; SCATTERING; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

SOLID STATE REACTIONS;

SILICON CARBIDE;

EID: 0035500784     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01211-0     Document Type: Conference Paper

References (14)

1. Properties of Silicon Carbide