Anomalous temperature-dependent characteristics of silicon diffused resistors

Electronics Letters

Volumn 39, Issue 13, 2003, Pages 1015-1016

  Chuang, Hung Ming ^a   Tsai, Sheng Fu ^a   Thei, Kong Beng ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC RESISTANCE; SEMICONDUCTOR JUNCTIONS; SILICON;

SILICON JUNCTIONS;

RESISTORS;

EID: 0038384138     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030659     Document Type: Article

References (7)

1. KRIEGER, G., and NILES, P.: 'Diffused resistors characteristics at high current density levels-analysis and applications', IEEE Trans. Electron Devices, 1989, 36, pp. 416-423
2. ITO, A.: 'Modeling of voltage-dependent diffused resistors', IEEE Trans. Electron Devices, 1997, 44, pp. 2300-2302
3. PARIKH, C.D., and PATRIKAR, R.M.: 'A compact model for the N-well resistor', Solid-State Electron., 1999, 43, pp. 683-685
4. + polysilicon resistors', Electron. Lett., 1992, 39, pp. 1968-1970
5. LIU, W.C., THEI, K.B., CHUANG, H.M., LIN, K.W., CHENG, C.C., HO, Y.S., SU, C.W., WONG, S.C., LIN, C.H., and DIAZ, C.H.: 'Characterization of polysilicon resistors in sub-0.25 μm CMOS ULSI applications', IEEE Electron Device Lett., 2001, 22, pp. 318-320
6. SZE, S.M.: 'Physics of semiconductor devices' (Wiley, New York, 1983)
7. LU, N.C.C., GERZBERG, L., LU. C.Y., and MWINDL, J.D.: 'Modeling and optimization of monolithic polycrystalline silicon resistors', IEEE Trans. Electron Devices, 1981, 28, (7), pp. 818-830