High-resolution depth monitoring of reactive ion etching of InP/InGaAs(P) MQWs using reflectance measurements

Semiconductor Science and Technology

Volumn 11, Issue 6, 1996, Pages 968-973

  Stano, A ^a   Coriasso, C ^a   Meneghini, G ^a  

^a CSELT   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

LASER OPTICS; MONITORING; OPTICAL RESOLVING POWER; REACTIVE ION ETCHING; REFLECTOMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DEPTH MONITORING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030173885     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/6/021     Document Type: Article

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