In situ observation of step-terrace structures on MOVPE grown InP(0 0 1) by using grazing X-ray scattering

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 361-364

  Kawamura, T ^a   Bhunia, S ^a   Watanabe, Y ^a   Fujikawa, S ^b   Matsui, J ^b   Kagoshima, Y ^b   Tsusaka, Y ^b  

^a NTT Basic Research Laboratories   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

III V; MOVPE; Semiconductors; Surface morphology; Surface step; X ray scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; GROWTH (MATERIALS); IMAGE ANALYSIS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACES; X RAY SCATTERING;

STEP-TERRACE STRUCTURES;

SURFACE STRUCTURE;

EID: 0038345946     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00433-1     Document Type: Conference Paper

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