Improvement of power performance in planar type AlGaAs/GaAs MESFET by substrate surface oxidation

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 542-548

  Kagiyama, T ^a   Saito, Y ^a   Otobe, K ^a   Nakajima, S ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

MESFET; Oxidation; Passivation film; Planar type; Surface state

Indexed keywords

DEPOSITION; ELECTRIC DISTORTION; MESFET DEVICES; OXIDATION; PHOTOELECTRON SPECTROSCOPY; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON NITRIDE; SUBSTRATES;

SURFACE OXIDATION;

SURFACE PROPERTIES;

EID: 0038345914     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00504-X     Document Type: Conference Paper

References (3)

1. K. Otobe, K. Nakata, S. Nakajima, IEEE GaAs Digest 67 (2000).
2. R.S. Christ, Proc. GaAs MANTECH 44 (1989).
3. Hong M., Passlack M., Mannaerts J.P., Kwo J., Chu S.N.G., Moriya N., Hou S.Y., Fratello V.J. J. Vac. Sci. Technol. B. 14(3):1996;2297.