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Volumn 50, Issue 3, 2003, Pages 203-209

Nondestructive evaluation of large-area PZN-8%PT single crystal wafers for medical ultrasound imaging probe applications

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIELECTRIC LOSSES; LEAD COMPOUNDS; MEDICAL IMAGING; PROBES; SINGLE CRYSTALS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; ULTRASONIC IMAGING;

EID: 0038284391     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2003.1193612     Document Type: Article
Times cited : (11)

References (19)
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  • 4
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  • 5
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    • Characteristics of relaxor-based piezoelectric single crystals for ultrasonic transducers
    • S.-E. Park and T. R. Shrout, "Characteristics of relaxor-based piezoelectric single crystals for ultrasonic transducers," IEEE Trans. Ultrason., Ferroelectr., Freq. Contr., vol. 44, pp. 1140-1147, 1997.
    • (1997) IEEE Trans. Ultrason., Ferroelectr., Freq. Contr. , vol.44 , pp. 1140-1147
    • Park, S.-E.1    Shrout, T.R.2
  • 11
    • 0034579924 scopus 로고    scopus 로고
    • Single crystal piezoelectrics: A revolutionary development for transducers
    • C. G. Oakley and M. J. Zipparo, "Single crystal piezoelectrics: A revolutionary development for transducers," in Proc. IEEE Ultrason. Symp., 2000, pp. 1157-1167.
    • Proc. IEEE Ultrason. Symp., 2000 , pp. 1157-1167
    • Oakley, C.G.1    Zipparo, M.J.2
  • 12
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    • Trapped metastable phases in PZN-(8-9)%PT single crystal wafers
    • Apr.; accepted for publication
    • L. C. Lim, F. J. Kumar, and A. Amin, "Trapped metastable phases in PZN-(8-9)%PT single crystal wafers," J. Appl. Phys., Apr. 2003, accepted for publication.
    • (2003) J. Appl. Phys.
    • Lim, L.C.1    Kumar, F.J.2    Amin, A.3
  • 14
    • 0035731106 scopus 로고    scopus 로고
    • Non-destructive evaluation of compositional and property distribution in large-size relaxor single crystal wafers
    • L. C. Lim and F. J. Kumar, "Non-destructive evaluation of compositional and property distribution in large-size relaxor single crystal wafers," in Proc. IEEE Ultrason. Symp., Oct. 7-10, 2001, pp. 1043-1046.
    • Proc. IEEE Ultrason. Symp., Oct. 7-10, 2001 , pp. 1043-1046
    • Lim, L.C.1    Kumar, F.J.2
  • 15
    • 0033715119 scopus 로고    scopus 로고
    • Morphological aspects of flux grown 0.91PZN-0.09PT crystals
    • F. J. Kumar, L. C. Lim, C. Chilong, and M. J. Tan, "Morphological aspects of flux grown 0.91PZN-0.09PT crystals," J. Cryst. Growth, vol. 216, pp. 311-316, 2000.
    • (2000) J. Cryst. Growth , vol.216 , pp. 311-316
    • Kumar, F.J.1    Lim, L.C.2    Chilong, C.3    Tan, M.J.4
  • 16
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    • 3 system grown by the vertical Bridgman method and its characterisation
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  • 17
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.